Research

Orbital-Angular-Momentum Control in Polaritonic Quantum Fluids

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S. M. H. Luk, N. H. Kwong, P. Lewandowski, S. Schumacher, and R. Binder, “Optically Controlled Orbital Angular Momentum Generation in a Polaritonic Quantum Fluid,” Phys. Rev. Lett. 119, 113903 (2017).

 


Polariton Patterns in Semiconductor Microcavities

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Y. C. Tse, Chris K. P. Chan, M. H. Luk, N. H. Kwong, P. T. Leung, R. Binder and Stefan Schumacher, “A population-competition model for analyzing transverse optical patterns including optical control and structural anisotropy,” New J. Phys. 17, 083054 (2015).

V.Ardizzone, P.Lewandowski, M.H.Luk, Y.C. Tse, N.H.Kwong, A.Lucke, M.Abbarchi, E.Baudin, E.Galopin, J.Bloch, A.Lemaitre, P.T. Leung, P.Roussignol, R.Binder, J.Tignon and S.Schumacher, “Formation and control of Turing patterns in a coherent quantum fluid,” Scientific Reports 3,3016 (2013).

Schumacher, N.H. Kwong, and R. Binder, “Influence of exciton-exciton correlations on the polarization characteristics of polariton amplification in semiconductor microcavities,” Phys. Rev. B 76, 245324 (2007).

 


Many-Body Interactions in Graphene

 

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R. Binder, A. T. Roberts, N. H. Kwong, A. Sandhu, and H. O. Everitt, “Global k-space analysis of electron-phonon interaction in graphene and application to M-point spectroscopy,” Phys. Rev. B 93, 085414 (2016)

A.T. Roberts, R.Binder, N.H. Kwong, D. Golla, D. Cormode, B.J. LeRoy, H.O. Everitt, and A. Sandhu, “Optical characterization of electron-phonon interactions at the saddle point in graphene,” Phys. Rev. Lett. 112, 187401(5) (2014).


Relation Between the Interband Dipole and Momentum Matrix Elements in Semiconductors

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Gu, N.H. Kwong, and R. Binder, “Relation between the interband dipole and momentum matrix elements in semiconductors,” Phys. Rev. B 87, 125301 (17 pages) (2013).


 

Slow and Fast Light Associated With Polariton Interference

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B. Gu, N.H. Kwong, R. Binder, and Arthur L. Smirl, “Slow and fast light associated with polariton interference,” Phys. Rev. Rev. B 82, 035313 (2010)

 


Exciton Spectroscopy of Mechanically Deformed GaAs Nanomembranes

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R. Binder, B. Gu, and N.H. Kwong, “Quantum-confined strain gradient effect in semiconductor nanomembranes,” Phy.Rev.B 90, 005200 (2014).


 

 

 Four-Wave Mixing and Many-Particle Effects in Semiconductors

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Many-Particle Theory of Luminescence and Absorption From Excited Semiconductors

 

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N.H. Kwong, G. Rupper, and R. Binder, “Self-consistent T-matrix theory of semiconductor light-absorption and luminescence,” Phys. Rev. B 79, 155205 (2009)


 

Electromagnetically-Induced Transparency Via Biexcitons in semiconductor Quantum Wells

 

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M. C Phillips, H. Wang, I. Rumyantsev, N. H. Kwong, R. Takayama and R. Binder, “Electromagnetically Induced Transparency in Semiconductors via Biexciton Coherence,” Phys. Rev. Lett. 91, 183602(4) (2003)


 

Theory of Semiconductor Laser Cooling at Low Temperatures

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G. Rupper, N.H. Kwong, and R. Binder, “Large excitonic enhancement of optical refrigeration in semiconductors,” Phys. Rev. Lett. 97, 117401 (2006)


 

Degenerate Four-Wave Mixing of Polaritons in Semiconductor Microcavities

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N.H. Kwong, R. Takayama, I. Rumyantsev, M. Kuwata-Gonokami and R. Binder, “Evidence of Nonperturbative Continuum Correlations in Two-Dimensional Excition System in Semiconductor Microcavities,” Phys. Rev. Lett. 87, 027402(4) (2001)


 

Many-Particle Effects in the Nonlinear Polarization Rotation in Semiconductor Quantum Well Bragg Structures

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D.T. Nguyen, N.H. Kwong, Z.S. Yang, R. Binder, and A.L. Smirl “Mechanism of all-optical spin-dependent polarization switching in Bragg-spaced quantum wells,” Appl. Phys. Lett., 90, 181116-1 (2007)


 

Many-Particle Theory of All-Optical Polarization Switching in Semiconductor Quantum Wells

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I. Rumyantsev, N. H. Kwong, R. Binder, Eric J. Gansen and Arthur L. Smirl, “c(3) analysis of all-optical polarization switching in semiconductor quantum wells,”  Phys. Rev. B  69, 235329(9) (2004)


Theory of Transversal Light Forces in Semiconductors

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R. Binder and M. Lindberg, “Optical electron-hole tweezers in semiconductor,” J. Phys. Cond. Matt. 18, 729-740 (2006).