![\"mllsetup_panel.parameters\"](\"https:\/\/wp.optics.arizona.edu\/milster\/wp-content\/uploads\/sites\/48\/2016\/08\/mllsetup_panel.parameters.gif\")
<\/p>\nThe mll Properties Setup Window is used to define important properties about the mll, select the one-dimensional profile used in the calculation, and setup the calculation for the exposure and development of photoresist patterns.<\/p>\n
specify important information about the mll.<\/p>\n
<\/p>\n
used to determine whether the x profile or the y profile will be used.<\/p>\n
The profile is defined as the x axis (y = 0) or the y axis (x = 0) in the current target window. The location of the profile can be changed by moving the window.<\/p>\n
![\"mllset1\"](\"https:\/\/wp.optics.arizona.edu\/milster\/wp-content\/uploads\/sites\/48\/2016\/08\/mllset1.gif\")
<\/p>\n
calculate inhibitor concentration data.<\/p>\n
Selecting the Perform calculation<\/em> of exposure check box results in the calculation of the inhibitor concentration through the layers.<\/p>\n The exposure program used to calculate the inhibitor concentration is selected in the Exposure files<\/em> window.<\/p>\n If the Begin with previous inhibitor<\/em> file check box is selected, the inhibitor concentration specified in the Exposure files<\/em> window will be loaded as the initial distribution before the exposure. If the Begin with previous inhibitor file<\/em> check box is not selected, the initial inhibitor concentration is uniform throughout the recording layers.<\/p>\n The resulting distribution after exposure is stored in the exposure file.<\/p>\n The “Calculation of development” box is used to calculate resist profile data.<\/p>\n Selecting the check box results in the calculation of the resist profile after development. The check box can be selected only if the Calculation of exposure<\/em> box is selected.<\/p>\n Parameter<\/strong><\/p>\n<\/td>\n Default Value<\/strong><\/p>\n<\/td>\n Description<\/strong><\/p>\n<\/td>\n<\/tr>\n The mll Properties Setup Window is used to define important properties about the mll, select the one-dimensional profile used in the calculation, and setup the calculation for the exposure and development of photoresist patterns. Parameters: specify important information about the mll. Incident index is the index of refraction of the medium directly above the layers. Substrate index is the index<\/p>\n","protected":false},"author":3,"featured_media":0,"parent":894,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-1623","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/wp.optics.arizona.edu\/milster\/wp-json\/wp\/v2\/pages\/1623","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/wp.optics.arizona.edu\/milster\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/wp.optics.arizona.edu\/milster\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/wp.optics.arizona.edu\/milster\/wp-json\/wp\/v2\/users\/3"}],"replies":[{"embeddable":true,"href":"https:\/\/wp.optics.arizona.edu\/milster\/wp-json\/wp\/v2\/comments?post=1623"}],"version-history":[{"count":3,"href":"https:\/\/wp.optics.arizona.edu\/milster\/wp-json\/wp\/v2\/pages\/1623\/revisions"}],"predecessor-version":[{"id":2012,"href":"https:\/\/wp.optics.arizona.edu\/milster\/wp-json\/wp\/v2\/pages\/1623\/revisions\/2012"}],"up":[{"embeddable":true,"href":"https:\/\/wp.optics.arizona.edu\/milster\/wp-json\/wp\/v2\/pages\/894"}],"wp:attachment":[{"href":"https:\/\/wp.optics.arizona.edu\/milster\/wp-json\/wp\/v2\/media?parent=1623"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}![\"mllset2\"](\"https:\/\/wp.optics.arizona.edu\/milster\/wp-content\/uploads\/sites\/48\/2016\/08\/mllset2.gif\")
<\/p>\n\n
\nCalculation of development:<\/h3>\n
![\"mllset3\"](\"https:\/\/wp.optics.arizona.edu\/milster\/wp-content\/uploads\/sites\/48\/2016\/08\/mllset3.gif\")
<\/p>\n\n
\n\n
\n \n \n \n \n 1<\/td>\n 200<\/td>\n Initial number of sample points<\/em> evenly spaced across the top
\nsurface of the layers being processed in the developer.<\/td>\n<\/tr>\n\n 2<\/td>\n 0.25<\/td>\n Relative distance for the smallest allowed separation<\/em> of the
\nsample points during development.\u00a0 The distance is relative to the initial separation
\nacross the top of the layers.<\/td>\n<\/tr>\n\n 3<\/td>\n 2<\/td>\n Relative distance for the largest allowed separation<\/em> of the
\nsample points during development.\u00a0 The distance is relative to the initial separation
\nacross the top of the layers.<\/td>\n<\/tr>\n\n 4<\/td>\n 500<\/td>\n Maximum number of development cycles<\/em>.\u00a0 Although the user
\nsets an estimate of the number of cycles in the Number of develop cycles<\/em>, the resim<\/em>
\nprogram can autoscale the time increments if the development is proceeding too rapidly.
\nTherefore, an upper limit is implemented.<\/td>\n<\/tr>\n\n 5<\/td>\n 5.63<\/td>\n Dill’s E1 development parameter.\u00a0 This parameter is specific to each
\nresist.<\/td>\n<\/tr>\n\n 6<\/td>\n 7.43<\/td>\n Dill’s E2 development parameter. This parameter is specific to each
\nresist.<\/td>\n<\/tr>\n\n 7<\/td>\n -12.6<\/td>\n Dill’s E3 development parameter. This parameter is specific to each
\nresist.<\/td>\n<\/tr>\n\n 8<\/td>\n 1.75e-6<\/td>\n Starting depth in the layers for development.\u00a0 This option is used
\nwhen, for example, liftoff or contrast enhancement layers are used in the exposure but are
\nremoved before development.<\/td>\n<\/tr>\n\n 9<\/td>\n 2.2e-6<\/td>\n Maximum depth in the layers through which the resist profile is generated.<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"excerpt":{"rendered":"